IEC 63068-2 Ed. 1.0 en:2019 Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection

standard by International Electrotechnical Commission, 01/30/2019

Full Description

IEC 63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers. This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.

Product Details

Edition: 1.0 Published: 01/30/2019 Number of Pages: 25 File Size: 1 file , 3 MB