IEC 63068-1 Ed. 1.0 en:2019 Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects

standard by International Electrotechnical Commission, 01/30/2019

Full Description

IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.

Product Details

Edition: 1.0 Published: 01/30/2019 Number of Pages: 23 File Size: 1 file , 5.6 MB